標題: The effect of pulsed laser annealing on the nickel silicide formation
作者: Chen, Hou-Yu
Lin, Chia-Yi
Huang, Chien-Chao
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: NiSi(x);Pulsed laser annealing (PLA);Schottky barrier height (SBH);Rapid thermal annealing (RTA)
公開日期: 1-Dec-2010
摘要: The pulsed laser annealing (PLA) is used to assist nickel silicide transformation for Schottky barrier height reduction and tensile strain enhancement and the effect of different laser power are investigated. In this report, a two-step annealing process which combine the conventional rapid thermal annealing with pulsed laser annealing is proposed to achieve a smooth silicon-rich NiSi(x) interfacial layer on (1 0 0) silicon. With optimized laser energy, a 0.2 eV Schottky barrier height (SBH) modulation is observed from Schottky diode electrical characterization. Furthermore. PLA provides sufficient effective temperature during silicidation which also lead to increased tensile stress of silicide film than the two-step RTA silicide is also investigated. The SBH modulation and tensile stress enhancement benefits of PLA silicidation are considered as an alternative to the conventional rapid thermal annealing for ultra-scaled devices performance enhancement. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2010.06.009
http://hdl.handle.net/11536/26291
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.06.009
期刊: MICROELECTRONIC ENGINEERING
Volume: 87
Issue: 12
起始頁: 2540
結束頁: 2543
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