標題: Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film
作者: Chang, Kow-Ming
Tzeng, Wen-Hsien
Liu, Kou-Chen
Chan, Yi-Chun
Kuo, Chun-Chih
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Dec-2010
摘要: Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices. (C) Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2010.05.012
http://hdl.handle.net/11536/26251
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2010.05.012
期刊: MICROELECTRONICS RELIABILITY
Volume: 50
Issue: 12
起始頁: 1931
結束頁: 1934
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