標題: Cobalt silicide nanocables grown on Co films: synthesis and physical properties
作者: Hsin, Cheng-Lun
Yu, Shih-Ying
Wu, Wen-Wei
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 3-Dec-2010
摘要: Single-crystalline cobalt silicide/SiO(x) nanocables have been grown on Co thin films on an SiO(2) layer by a self-catalysis process via vapor-liquid-solid mechanism. The nanocables consist of a core of CoSi nanowires and a silicon oxide shell with a length of several tens of micrometers. In the confined space in the oxide shell, the CoSi phase is stable and free from agglomeration in samples annealed in air ambient at 900 degrees C for 1 h. The nanocable structure came to a clear conclusion that the thermal stability of the silicide nanowires can be resolved by the shell encapsulation. Cobalt silicide nanowires were obtained from the nanocable structure. The electrical properties of the CoSi nanowires have been found to be compatible with their thin film counterpart and a high maximum current density of the nanowires has been measured. One way to obtain silicate nanowires has been demonstrated. The silicate compound, which is composed of cobalt, silicon and oxygen, was achieved. The Co silicide/oxide nanocables are potentially useful as a key component of silicate nanowires, interconnects and magnetic units in nanoelectronics.
URI: http://dx.doi.org/10.1088/0957-4484/21/48/485602
http://hdl.handle.net/11536/26248
ISSN: 0957-4484
DOI: 10.1088/0957-4484/21/48/485602
期刊: NANOTECHNOLOGY
Volume: 21
Issue: 48
結束頁: 
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