標題: Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer
作者: Lu, Tzu-Chun
Ke, Min-Yung
Yang, Sheng-Chieh
Cheng, Yun-Wei
Chen, Liang-Yi
Lin, Guan-Jhong
Lu, Yu-Hsin
He, Jr-Hau
Kuo, Hao-Chung
Huang, JianJang
光電工程學系
Department of Photonics
公開日期: 15-Dec-2010
摘要: Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects. (C) 2010 Optical Society of America
URI: http://dx.doi.org/10.1364/OL.35.004109
http://hdl.handle.net/11536/26226
ISSN: 0146-9592
DOI: 10.1364/OL.35.004109
期刊: OPTICS LETTERS
Volume: 35
Issue: 24
起始頁: 4109
結束頁: 4111
Appears in Collections:Articles


Files in This Item:

  1. 000285387300009.pdf