標題: Electron delocalization of tensily strained GaAs quantum dots in GaSb matrix
作者: Lin, T. C.
Wu, Y. H.
Li, L. C.
Sung, Y. T.
Lin, S. D.
Chang, L.
Suen, Y. W.
Lee, C. P.
材料科學與工程學系
電子工程學系及電子研究所
奈米科技中心
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
Center for Nanoscience and Technology
公開日期: 15-Dec-2010
摘要: The magneto-optical response of type-II tensily strained GaAs self-assembled quantum dots in GaSb was investigated in magnetic fields up to 14 T. By depositing different GaAs amount, the dot sizes and the corresponding emission energies were varied. We analyzed the carrier wave function extent of different dots using the diamagnetic shift results. It was found that, with the increase in the energy (the reduction in the dot size), the diamagnetic coefficient first rises quickly and then saturates at around 21 mu eV/T(2). Based on a simple calculation model, this unusual tendency is attributed to the electrons gradually spilling out of the quantum dot to the wetting layer as the dots get smaller. This delocalization effect is enhanced in this material system due to the tensile strain relaxation within the dots, which raises the conduction band edge over that in the wetting layer. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3520669]
URI: http://dx.doi.org/10.1063/1.3520669
http://hdl.handle.net/11536/26219
ISSN: 0021-8979
DOI: 10.1063/1.3520669
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 108
Issue: 12
結束頁: 
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