標題: Nickel Silicide Formation using Pulsed Laser Annealing for nMOSFET Performance Improvement
作者: Chen, Hou-Yu
Lin, Chia-Yi
Chen, Min-Cheng
Huang, Chien-Chao
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2011
摘要: The formation of a uniform, high tensile stress and low silicide/Si interfacial resistance nickel silicide in nMOSFET by introducing pulsed laser annealing (PLA) is reported. This annealing approach facilitated the phase transformation of nickel silicide to Si-rich NiSi(x) compounds using a low-thermal-budget process, improves the silicide/Si interface regularity and avoids familiar (111) NiSi(2) facet formation at a laser energy of 1.5 J cm(-2). By increasing laser energy density up to 2.3 J cm(-2), the device performance and statistics junction leakage distribution were degraded due to the increased sheet resistance of silicide layer and the destroyed silicide/Si interface morphology. When the PLA with a laser energy density of 1.5 J cm(-2) was employed for nickel silicidation on the p-type Schottky diodes, a 0.16 eV hole Schottky barrier height (SBH) increase from 0.52 to 0.68 eV was observed. In addition, the application of PLA for source/drain silicidation of nMOSFETs demonstrated an 8% enhancement in I(on) I(off) characteristic relative to that obtained through the conventional two-step rapid thermal annealing (RTA). This PLA method holds promise as a potential replacement for current nickel silicide annealing approaches toward extremely scaled-down transistors. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3601849] All rights reserved.
URI: http://hdl.handle.net/11536/26187
http://dx.doi.org/10.1149/1.3601849
ISSN: 0013-4651
DOI: 10.1149/1.3601849
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 158
Issue: 8
起始頁: H840
結束頁: H845
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