標題: Transient Effect Assisted NBTI Degradation in p-Channel LTPS TFTs under Dynamic Stress
作者: Lin, Chia-Sheng
Chen, Ying-Chung
Chang, Ting-Chang
Li, Hung-Wei
Chen, Shih-Ching
Hsu, Wei-Che
Jian, Fu-Yen
Chen, Te-Chih
Tai, Ya-Hsiang
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 2011
摘要: This work investigates dynamic negative bias temperature instability (NBTI) in p-channel low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) with different rise and fall times. Experimental results reveal identical increases in the interface state density (N(it)) induced by different dynamic NBTI stress conditions. Nevertheless, the degradation of the grain boundary trap (N(trap)) becomes more significant as rise time decreases to 1 mu s. Because the surface inversion layer cannot form during the short rise time, transient bulk voltage will cause excess holes to diffuse into the poly-Si bulk. Therefore, the significant N(trap) increase is assisted by this transient effect. (c) 2010 The Electrochemical Society. [DOI: 10.1149/1.3507253] All rights reserved.
URI: http://hdl.handle.net/11536/26186
http://dx.doi.org/10.1149/1.3507253
ISSN: 0013-4651
DOI: 10.1149/1.3507253
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 158
Issue: 1
起始頁: H10
結束頁: H14
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