標題: Quantum hydrodynamic simulation of discrete-dopant fluctuated physical quantities in nanoscale FinFET
作者: Li, Yiming
Cheng, Hui-Wen
Han, Ming-Hung
傳播研究所
電機工程學系
Institute of Communication Studies
Department of Electrical and Computer Engineering
關鍵字: Random dopant;Quantum hydrodynamic;Fluctuation;Modeling and simulation
公開日期: 1-Jan-2011
摘要: Impact of the discrete dopants on device performance is crucial in determining the behavior of nanoscale semiconductor devices Atomistic quantum mechanical device simulation for studying the effect of discrete dopants on device s physical quantities is urgent This work explores the physics of discrete-dopant-induced characteristic fluctuations in 16-nm fin-typed field effect transistor (FinFET) devices Discrete dopants are statistically positioned in the three-dimensional channel region to examine associated carrier's characteristic concurrently capturing "dopant concentration variation" and "dopant position fluctuation" An experimentally validated quantum hydrodynamic device simulation was conducted to investigate the potential profile and threshold voltage fluctuations of the 16-nm FinFET Results of this study provide further insight into the problem of fluctuation and the mechanism of immunity against fluctuation in 16-nm devices (C) 2010 Elsevier BV All rights reserved
URI: http://dx.doi.org/10.1016/j.cpc.2010.07.018
http://hdl.handle.net/11536/26183
ISSN: 0010-4655
DOI: 10.1016/j.cpc.2010.07.018
期刊: COMPUTER PHYSICS COMMUNICATIONS
Volume: 182
Issue: 1
起始頁: 96
結束頁: 98
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