標題: High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness
作者: Chen, W. B.
Cheng, C. H.
Lin, C. W.
Chen, P. C.
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: High-kappa dielectric;Ge;EOT;Mobility
公開日期: 1-一月-2011
摘要: We fabricated high performance gate-last TaN/La(2)O(3)/SiO(2) on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm(2)/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO(2)-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA). (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2010.09.006
http://hdl.handle.net/11536/26137
ISSN: 0038-1101
DOI: 10.1016/j.sse.2010.09.006
期刊: SOLID-STATE ELECTRONICS
Volume: 55
Issue: 1
起始頁: 64
結束頁: 67
顯示於類別:期刊論文


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