標題: Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETs
作者: Wu, Yu-Sheng
Hsieh, Hsin-Yuan
Hu, Vita Pi-Ho
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Germanium-on-insulator (GeOI);quantum confinement (QC);threshold voltage roll-off
公開日期: 1-Jan-2011
摘要: This letter investigates the impact of quantum confinement (QC) on the short-channel effect (SCE) of ultrathin-body (UTB) and thin-buried-oxide germanium-on-insulator (GeOI) MOSFETs using an analytical solution of Schrodinger equation verified with TCAD simulation. Our study indicates that, although the QC effect increases the threshold voltage (V(th)) roll-off when the channel thickness (T(ch)) is larger than a critical value (T(ch,crit)), it may decrease the V(th) roll-off of GeOI MOSFETs when the T(ch) is smaller than T(ch,crit). Since Ge and Si channels exhibit different degrees of confinement and T(ch,crit), the impact of QC must be considered when one-to-one comparisons between UTB GeOI and Si-on-insulator MOSFETs regarding the SCE are made.
URI: http://dx.doi.org/10.1109/LED.2010.2089425
http://hdl.handle.net/11536/26126
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2089425
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 1
起始頁: 18
結束頁: 20
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