標題: Characterization of HF-PECVD a-Si:H thin film solar cells by using OES studies
作者: Lien, Shui-Yang
Chang, Yin-Yu
Cho, Yun-Shao
Wang, Jui-Hao
Weng, Ko-Wei
Chao, Ching-Hsun
Chen, Chia-Fu
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Hydrogenated amorphous silicon films;Optical emission spectrometry;Plasma enhanced chemical vapor deposition
公開日期: 1-Jan-2011
摘要: Hydrogenated amorphous silicon (a-Si:H) films show considerable potential for the fabrication of thin film solar cells. In this study, the a-Si:H thin films have been deposited in a parallel-plate radio frequency (RF) plasma reactor fed with pure SiH(4). The plasma diagnostics were performed simultaneously during the a-Si:H solar cell deposition process using an optical emission spectrometer (OES) in order to study their correlations with growth rate and microstructure of the films. During the deposition, the emitting species (SiH*, Si*, H*) was analyzed. The effect of RF power on the emission intensities of excited SiH, Si and H on the film growth rate has been investigated. The OES analysis revealed a chemisorption-based deposition model of the growth mechanism. Finally, the a-Si:H thin film solar cell with an efficiency of 7.6% has been obtained. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jnoncrysol.2010.09.044
http://hdl.handle.net/11536/26075
ISSN: 0022-3093
DOI: 10.1016/j.jnoncrysol.2010.09.044
期刊: JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume: 357
Issue: 1
起始頁: 161
結束頁: 164
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