標題: Effect of Annealing on the Microstructure and Electrical Property of RuN Thin Films
作者: Wu, Chia-Yang
Lee, Wen-Hsi
Chang, Shih-Chieh
Cheng, Yi-Lung
Wang, Ying-Lang
照明與能源光電研究所
Institute of Lighting and Energy Photonics
公開日期: 2011
摘要: Ruthenium (Ru) and ruthenium nitride (RuN) thin films have been investigated as candidates for barrier layers in copper (Cu) damascene processes. In order to study the thermal stability of the Ru and RuN films, the as-deposited films were annealed by rapid thermal annealing (RTA), and the film resistance was real-time measured by a four-point probe, which was embedded in the RTA tool. The X-ray diffraction data show that the grain size of Ru decreased with the increase of the nitrogen (N) content. The Ru phases gradually changed to the RuN phases, and the resistivity of the RuN films decreased with annealing time due to nitrogen effusion. Discontinuous RuN films were found when the annealing temperature was higher than 800 degrees C and then caused a poor Cu diffusion barrier property. We also demonstrated that the Cu film could be directly electroplated on the RuN films with adequate adhesion. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3537825] All rights reserved.
URI: http://hdl.handle.net/11536/26063
http://dx.doi.org/10.1149/1.3537825
ISSN: 0013-4651
DOI: 10.1149/1.3537825
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 158
Issue: 3
起始頁: H338
結束頁: H342
Appears in Collections:Articles


Files in This Item:

  1. 000286677900090.pdf