標題: Highly Reflective Ag/La Bilayer Ohmic Contacts to p-Type GaN
作者: Chen, I-Chen
Chen, Yi-Dar
Hsieh, Chih-Chien
Kuo, Cheng-Huang
Chang, Li-Chuan
照明與能源光電研究所
Institute of Lighting and Energy Photonics
公開日期: 2011
摘要: A new Ag/La bilayer metal contact scheme has been developed for producing high reflectance and low contact resistivity ohmic contacts to p-GaN. An excellent reflectance of over 91% at 460 nm wavelength and low specific contact resistivity of 1.6 x 10(-4) Omega cm(2) were obtained from Ag/La (150/20 nm) contact annealed at 450 degrees C for 1 min. The La overlayer was oxidized to form La(2)O(3) when exposed to air, which effectively suppresses exposure of the Ag layer to oxygen atmosphere during annealing, leading to a good ohmic contact with smooth surface morphology and high reflectance. Additionally, Ag/La contacts show excellent thermal stability after a long thermal annealing at 300 degrees C in air ambient. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3533673] All rights reserved.
URI: http://hdl.handle.net/11536/26062
http://dx.doi.org/10.1149/1.3533673
ISSN: 0013-4651
DOI: 10.1149/1.3533673
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 158
Issue: 3
起始頁: H285
結束頁: H288
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