標題: Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass
作者: Lee, Wei-Han
Chen, Ming-Jer
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Effective mass;mechanical stress;MOSFET;piezo;quantum confinement;tunneling;uniaxially compressive strain
公開日期: 1-Jan-2011
摘要: Currently, both the band-structure calculation and the mobility measurement are used to assess the electron piezo-effective-mass coefficients in strained nMOSFETs. In this paper, we present a new experimental method through a fitting of the strain-altered electron gate direct tunneling current. The core of this method lies in the sensitivity of the direct tunneling to the position of the subband level in the presence of the electron piezo-effective-mass coefficients. First, a correction-coefficient generating expression is systematically constructed to compensate for the error in the subband levels due to the use of a triangular potential approximation. Then, with the known deformation potential constants and uniaxially compressive stress in the channel as inputs, a strain quantum simulator is carried out. The resulting gate direct tunneling current is used to fit experimental data, thus leading to the values of the piezo-effective-mass coefficients associated with the twofold and fourfold valleys. The comparison of the extracted piezo-effective-mass coefficients to those published in the literature is made.
URI: http://dx.doi.org/10.1109/TED.2010.2084578
http://hdl.handle.net/11536/26047
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2084578
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 58
Issue: 1
起始頁: 39
結束頁: 45
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