標題: Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
作者: Chiu, Ching-Hsueh
Lin, Da-Wei
Lin, Chien-Chung
Li, Zhen-Yu
Chang, Wei-Ting
Hsu, Hung-Wen
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
Liao, Wei-Tsai
Tanikawa, Tomoyuki
Honda, Yoshio
Yamaguchi, Masahito
Sawaki, Nobuhiko
光電系統研究所
電子物理學系
光電工程學系
Institute of Photonic System
Department of Electrophysics
Department of Photonics
公開日期: 1-一月-2011
摘要: We present a study of semi-polar (1 (1) over bar 01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current. (C) 2011 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/APEX.4.012105
http://hdl.handle.net/11536/26036
ISSN: 1882-0778
DOI: 10.1143/APEX.4.012105
期刊: APPLIED PHYSICS EXPRESS
Volume: 4
Issue: 1
結束頁: 
顯示於類別:期刊論文


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