標題: ACTIVITY-COEFFICIENTS OF ELECTRONS AND HOLES IN DEGENERATE SEMICONDUCTORS WITH NONUNIFORM COMPOSITION
作者: CHANG, KM
YEH, TH
WANG, SW
LEE, CH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ACTIVITY COEFFICIENT;REFERENCE STATE;HEAVILY DOPED SEMICONDUCTOR;NONUNIFORM BAND STRUCTURE;BAND-GAP NARROWING;INTRINSIC LEVEL
公開日期: 1-三月-1994
摘要: A new simple, general and rigorous analytic expression for the equilibrium activity coefficients of electrons and holes in degenerate semiconductors with nonuniform composition is presented. These activity coefficients are functions of the carrier degeneracy (Fermi-Dirac statistics), the band gap, the electron affinity and the density of states which vary with position. The calculation of carrier activity coefficients requires the selection of chemical potential and electrostatic potential references. The choice of these reference states is addressed. The relationships between purely thermodynamic quantities and parameters of the band theory are also presented. Emphasis is also placed on formulating an equation in a simple, Boltzmann-like form in which the nonideal behavior is described by two parameters, the effective band-gap shrinkage, DELTAE(g), and the effective asymmetry factor, A. In this form the working equations for the carrier densities and activity coefficients are convenient for use in computer-aided analysis and design. The approach presented here allows convenient treatment of nonuniform degenerate semiconductors in a manner that is consistent with thermodynamics as well as with the Poisson-Boltzmann equation for the electrostatic potential.
URI: http://dx.doi.org/10.1143/JJAP.33.1285
http://hdl.handle.net/11536/2601
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.1285
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 3A
起始頁: 1285
結束頁: 1292
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NG40000012.pdf