標題: A delta-doped quantum well system with additional modulation doping
作者: Luo, Dong-Sheng
Lin, Li-Hung
Su, Yi-Chun
Wang, Yi-Ting
Peng, Zai Fong
Lo, Shun-Tsung
Chen, Kuang Yao
Chang, Yuan Huei
Wu, Jau-Yang
Lin, Yiping
Lin, Sheng-Di
Chen, Jeng-Chung
Huang, Chun Feng
Liang, Chi-Te
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2011
摘要: A delta-doped quantum well with additional modulation doping may have potential applications. Utilizing such a hybrid system, it is possible to experimentally realize an extremely high two-dimensional electron gas (2DEG) density without suffering inter-electronic-subband scattering. In this article, the authors report on transport measurements on a delta-doped quantum well system with extra modulation doping. We have observed a 0-10 direct insulator-quantum Hall (I-QH) transition where the numbers 0 and 10 correspond to the insulator and Landau level filling factor nu = 10 QH state, respectively. In situ titled-magnetic field measurements reveal that the observed direct I-QH transition depends on the magnetic component perpendicular to the quantum well, and the electron system within this structure is 2D in nature. Furthermore, transport measurements on the 2DEG of this study show that carrier density, resistance and mobility are approximately temperature (T)-independent over a wide range of T. Such results could be an advantage for applications in T-insensitive devices.
URI: http://hdl.handle.net/11536/25984
http://dx.doi.org/10.1186/1556-276X-6-139
ISSN: 1931-7573
DOI: 10.1186/1556-276X-6-139
期刊: NANOSCALE RESEARCH LETTERS
Volume: 6
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