標題: Mathematical Yield Estimation for Two-Dimensional-Redundancy Memory Arrays
作者: Chao, Mango C. -T.
Chin, Ching-Yu
Lin, Chen-Wei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: Defect repair has become a necessary process to enhance the overall yield for memories since manufacturing a natural good memory is difficult in current memory technologies. This paper presents an yield-estimation scheme, which utilizes an induction-based approach to calculate the probability that all defects in a memory can be successfully repaired by a two-dimensional redundancy design. Unlike previous works, which rely on a time-consuming simulation to estimate the expected yield, our yield-estimation scheme only requires scalable mathematical computation and can achieve a high accuracy with limited time and space complexity. Also, the proposed estimation scheme can consider the impact of single defects, column defects, and row defects simultaneously. With the help of the proposed yield-estimation scheme, we can effectively identify the most profitable redundancy configuration for large memory designs within few seconds while it may take several hours or even days by using conventional simulation approach.
URI: http://hdl.handle.net/11536/25942
http://dx.doi.org/10.1109/ICCAD.2010.5654154
ISBN: 978-1-4244-8192-7
ISSN: 1933-7760
DOI: 10.1109/ICCAD.2010.5654154
期刊: 2010 IEEE AND ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN (ICCAD)
起始頁: 235
結束頁: 240
顯示於類別:會議論文


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