標題: Regrowth of High Quality Heavily Si-Doped nGaN Utilizing Nano-Rod GaN Template
作者: Kuo, Cheng-Huang
Chang, Li-Chuan
Chou, Hsiu-Mei
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: doping profiles;elemental semiconductors;etching;gallium compounds;heavily doped semiconductors;III-V semiconductors;MOCVD;nanofabrication;nanorods;semiconductor doping;semiconductor epitaxial layers;semiconductor growth;silicon;wide band gap semiconductors
公開日期: 2011
摘要: In this study, heavily Si-doped n-type GaN (n-GaN) epitaxial layers with and without nanorod GaN (NR GaN) template were grown by metal organic chemical vapor deposition (MOCVD) system. It was found that we could achieve high-qulaity heavily Si-doped n-GaN layers by using the NR GaN template. It was also found that we can reduce etching pits density in n-GaN (1.5E19 cm(-3)) epitaxial layer by a factor of 2.82 using the NR GaN template, as compared to the conventional sapphire substrate. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3617533] All rights reserved.
URI: http://hdl.handle.net/11536/25933
http://dx.doi.org/10.1149/1.3617533
ISSN: 0013-4651
DOI: 10.1149/1.3617533
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 158
Issue: 10
起始頁: H961
結束頁: H964
顯示於類別:期刊論文


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  1. 000294063000066.pdf