標題: Photovoltaic Performance of HWCVD Deposited mu c-Si:H Solar Cells Using Graded Hydrogen Dilution Window-Layer
作者: Chiou, Uio-Pu
Shieh, Jia-Min
Pan, Fu-Ming
Huang, Wen-Hsien
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
關鍵字: chemical vapour deposition;elemental semiconductors;hydrogen;hydrogenation;photovoltaic effects;semiconductor thin films;silicon;solar cells
公開日期: 2011
摘要: The study prepared thin film solar cells using hydrogenated microcrystalline silicon (mu c-Si:H) by hot-wire chemical vapor deposition (HWCVD). Hydrogen dilution profiling was used to deposit the boron-doped p-layer on the SnO(2):F substrate. The mu c-Si:H solar cell with triple hydrogen dilution grades in the p-layer has a high photoconversion efficiency of 4.5% as a result of the improvement in the electrical and the antireflection properties of the cell. The short circuit current (J(sc)) and the open circuit voltage (V(oc)) of the solar cell are 19.7 mA/cm(2) and 450 mV, respectively. The graded hydrogen concentration in the p-layer improves the crystallinity and the antireflection of the absorbing layer (intrinsic layer), thereby enhancing the J(sc). The high V(oc) is ascribed to that a high hydrogen dilution ratio may enhance boron doping in the p-layer leading to the improvement of the V(oc). (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3622290] All rights reserved.
URI: http://hdl.handle.net/11536/25932
http://dx.doi.org/10.1149/1.3622290
ISSN: 0013-4651
DOI: 10.1149/1.3622290
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 158
Issue: 10
起始頁: H1017
結束頁: H1020
顯示於類別:期刊論文


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