標題: VERTICAL INTEGRATION OF A GAAS/ALGAAS QUANTUM-WELL LASER AND A LONG-WAVELENGTH QUANTUM-WELL INFRARED PHOTODETECTOR
作者: TSANG, JS
LEE, CP
TSAI, KL
CHEN, HR
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: INTEGRATED OPTOELECTRONICS;SEMICONDUCTOR LASERS;INFRARED DETECTORS;PHOTODETECTORS
公開日期: 3-三月-1994
摘要: A short-wavelength (approximately 0.8mum) GaAs/AlGaAs graded-index separate-confinement heterostructure quantum-well laser has been monolithically integrated with a long-wavelength (approximately 8mum) GaAs/AlGaAs multiple-quantum-well infra-red photodetector on a semi-insulating GaAs substrate by molecular beam epitaxy. The vertical integration method is used and the combined structure is a pinin structure. Both the laser and detector exhibit excellent characteristics. At room temperature, the ridge waveguide laser has an extremely low threshold current of 25 mA and a differential quantum efficiency above 65% with a stripe width of 20mum. The quantum-well detector has a peak response at 8mum and a responsivity of 0.7A/W.
URI: http://dx.doi.org/10.1049/el:19940295
http://hdl.handle.net/11536/2588
ISSN: 0013-5194
DOI: 10.1049/el:19940295
期刊: ELECTRONICS LETTERS
Volume: 30
Issue: 5
起始頁: 450
結束頁: 451
顯示於類別:期刊論文


文件中的檔案:

  1. A1994ND75500054.pdf