標題: Using silicon nanowire devices to detect adenosine triphosphate liberated from electrically stimulated HeLa cells
作者: Chen, C. C.
Chen, Y-Z
Huang, Y-J
Sheu, J-T
材料科學與工程學系奈米科技碩博班
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
關鍵字: Adenosine triphosphate;HeLa cell;Silicon nanowire field-effect transistor;Ionic strength
公開日期: 15-一月-2011
摘要: In this study, we used a biosensor chip featuring Abl tyrosine kinase-modified silicon nanowire field-effect transistors (SiNW-FETs) to detect adenosine triphosphate (ATP) liberated from HeLa cells that had been electrically stimulated. Cells that are cultured in high-ionic-strength media or buffer environments usually undermine the sensitivity and selectively of SiNW-FET-based sensors. Therefore, we first examined the performance of the biosensor chip incorporating the SiNW-FETs in both low- and high-ionic-strength buffer solutions. Next, we stimulated, using a sinusoidal wave (1.0V, 50 Hz, 10 min), HeLa cells that had been cultured on a cell-culture chip featuring interdigitated electrodes. The extracellular ATP concentration increased by ca. 18.4-fold after electrical stimulation. Finally, we detected the presence of extracellular ATP after removing a small amount of buffer solution from the cell-cultured chip and introducing it into the biosensor chip. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.bios.2010.10.003
http://hdl.handle.net/11536/25878
ISSN: 0956-5663
DOI: 10.1016/j.bios.2010.10.003
期刊: BIOSENSORS & BIOELECTRONICS
Volume: 26
Issue: 5
起始頁: 2323
結束頁: 2328
顯示於類別:期刊論文


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