標題: Nitrogenated amorphous InGaZnO thin film transistor
作者: Liu, Po-Tsun
Chou, Yi-Teh
Teng, Li-Feng
Li, Fu-Hai
Shieh, Han-Ping
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 31-一月-2011
摘要: This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO: N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO: N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3551537]
URI: http://dx.doi.org/10.1063/1.3551537
http://hdl.handle.net/11536/25860
ISSN: 0003-6951
DOI: 10.1063/1.3551537
期刊: APPLIED PHYSICS LETTERS
Volume: 98
Issue: 5
結束頁: 
顯示於類別:期刊論文


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  1. 000286988400030.pdf