標題: Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots
作者: Hsu, K. S.
Chiu, T. T.
Lin, Wei-Hsun
Chen, K. L.
Shih, M. H.
Lin, Shih-Yen
Chang, Yia-Chung
光電工程學系
Department of Photonics
公開日期: 31-一月-2011
摘要: Microdisk lasers with active region made of type-II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. A microdisk cavity with diameter of 3.9 mu m was fabricated from a 225-nm-thick GaAs layer filled with GaSb quantum dots. Lasing at wavelengths near 1000 nm at 150 K was achieved for this microdisk. A high threshold characteristic temperature of 77 K was also observed. It is found that the lasing wavelength matches closely with the first-order whispering-gallery mode of the cavity as obtained from the finite-element method simulation. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3543839]
URI: http://dx.doi.org/10.1063/1.3543839
http://hdl.handle.net/11536/25859
ISSN: 0003-6951
DOI: 10.1063/1.3543839
期刊: APPLIED PHYSICS LETTERS
Volume: 98
Issue: 5
結束頁: 
顯示於類別:期刊論文


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