標題: Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy
作者: Katkov, A. V.
Chi, Jim
Wang, C. C.
Cheng, C.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-二月-2011
摘要: Strong enhancement of photoluminescence (PL) efficiency has been observed in a GaAs/InAs quantum dots-in-a-well structure, grown with in situ irradiation of atomic hydrogen supplied by a radio-frequency hydrogen plasma source. The PL enhancement and wavelength position at room temperature have been found to be stable under extensive thermal annealing up to 630 degrees C in vacuum. As shown by the corresponding improvement of the barrier material, the possible mechanism for PL enhancement is the reduced nonradiative recombination in the barrier region by in situ passivation of defects while they are generated.
URI: http://dx.doi.org/10.1088/0268-1242/26/2/022001
http://hdl.handle.net/11536/25852
ISSN: 0268-1242
DOI: 10.1088/0268-1242/26/2/022001
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 26
Issue: 2
結束頁: 
顯示於類別:期刊論文


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