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dc.contributor.authorChang, Li-Chuanen_US
dc.contributor.authorKuo, Cheng-Huangen_US
dc.contributor.authorKuo, Chi-Wenen_US
dc.date.accessioned2014-12-08T15:37:35Z-
dc.date.available2014-12-08T15:37:35Z-
dc.date.issued2011-02-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2010.10.024en_US
dc.identifier.urihttp://hdl.handle.net/11536/25834-
dc.description.abstractThis study presents nitride-based light-emitting diodes (LEDs) with inverted pyramid sidewalls by chemical wet etching nitride epitaxial layers and investigates the chemical wet etching mechanism of inverted pyramid sidewalls. It is well known that chemical etching solutions such as KOH, H(2)SO(4) and H(3)PO(4), to selectively etch the N-face GaN but not the Ga-face GaN. In this study, the N-face GaN was exposed around the chip by laser scribing at the GaN/sapphire interface. These channels provided paths for the chemical etchant to flow and allow the etching solution to further contact with and etch the exposed bottom N-face GaN. Chemical etching of the chip sidewalls formed the inverted hexagonal pyramid shape with (10-1-1) facets. Findings show that inverted pyramid sidewalls enhance 20 mA LED output power by 27% for LEDs, with chemical etching of the chip sidewalls for 4 min, compared to the conventional LED. The larger LED output power is attributed to increased light extraction efficiency by inverted pyramid sidewalls. (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectGaNen_US
dc.subjectLight-emitting diodesen_US
dc.subjectNitrideen_US
dc.subjectInGaN-GaN MQWen_US
dc.subjectMetalorganic chemical vapor depositionen_US
dc.titleOutput power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2010.10.024en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume56en_US
dc.citation.issue1en_US
dc.citation.spage8en_US
dc.citation.epage12en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000287272000002-
dc.citation.woscount0-
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