標題: Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure
作者: Chang, Li-Chuan
Kuo, Cheng-Huang
Kuo, Chi-Wen
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: GaN;Light-emitting diodes;Nitride;InGaN-GaN MQW;Metalorganic chemical vapor deposition
公開日期: 1-二月-2011
摘要: This study presents nitride-based light-emitting diodes (LEDs) with inverted pyramid sidewalls by chemical wet etching nitride epitaxial layers and investigates the chemical wet etching mechanism of inverted pyramid sidewalls. It is well known that chemical etching solutions such as KOH, H(2)SO(4) and H(3)PO(4), to selectively etch the N-face GaN but not the Ga-face GaN. In this study, the N-face GaN was exposed around the chip by laser scribing at the GaN/sapphire interface. These channels provided paths for the chemical etchant to flow and allow the etching solution to further contact with and etch the exposed bottom N-face GaN. Chemical etching of the chip sidewalls formed the inverted hexagonal pyramid shape with (10-1-1) facets. Findings show that inverted pyramid sidewalls enhance 20 mA LED output power by 27% for LEDs, with chemical etching of the chip sidewalls for 4 min, compared to the conventional LED. The larger LED output power is attributed to increased light extraction efficiency by inverted pyramid sidewalls. (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2010.10.024
http://hdl.handle.net/11536/25834
ISSN: 0038-1101
DOI: 10.1016/j.sse.2010.10.024
期刊: SOLID-STATE ELECTRONICS
Volume: 56
Issue: 1
起始頁: 8
結束頁: 12
顯示於類別:期刊論文


文件中的檔案:

  1. 000287272000002.pdf