Title: Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing
Authors: Lee, Yao-Jen
Chuang, Shang-Shiun
Hsueh, Fu-Kuo
Lin, Ho-Ming
Wu, Shich-Chuang
Wu, Ching-Yi
Tseng, Tseung-Yuen
Department of Electronics Engineering and Institute of Electronics
Keywords: Germanium;low temperature;microwave anneal;phosphorus;rapid thermal anneal (RTA)
Issue Date: 1-Feb-2011
Abstract: Phosphorus activated in germanium epitaxy atop Si wafer by low-temperature microwave annealing technique was investigated in this letter. Compared to the conventional RTA process, the temperature of phosphorus activation could be 120 degrees C to 140 degrees C which is an improvement in temperature reduction at the same sheet resistance. According to the SRP, up to 150 degrees C reduction in maximum temperature at the same activation concentration (about 2 x 10(19) cm(-3)) could be achieved. Through adjusting the microwave power and process time, sheet resistance could be decreased while suppressing dopant diffusion. In addition, the inserted susceptor wafers above and below the processing wafer also suppressed the dopant diffusion and improved film roughness.
URI: http://dx.doi.org/10.1109/LED.2010.2090937
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2090937
Volume: 32
Issue: 2
Begin Page: 194
End Page: 196
Appears in Collections:Articles

Files in This Item:

  1. 000286677700028.pdf