標題: Dopant Activation in Single-Crystalline Germanium by Low-Temperature Microwave Annealing
作者: Lee, Yao-Jen
Chuang, Shang-Shiun
Hsueh, Fu-Kuo
Lin, Ho-Ming
Wu, Shich-Chuang
Wu, Ching-Yi
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Germanium;low temperature;microwave anneal;phosphorus;rapid thermal anneal (RTA)
公開日期: 1-二月-2011
摘要: Phosphorus activated in germanium epitaxy atop Si wafer by low-temperature microwave annealing technique was investigated in this letter. Compared to the conventional RTA process, the temperature of phosphorus activation could be 120 degrees C to 140 degrees C which is an improvement in temperature reduction at the same sheet resistance. According to the SRP, up to 150 degrees C reduction in maximum temperature at the same activation concentration (about 2 x 10(19) cm(-3)) could be achieved. Through adjusting the microwave power and process time, sheet resistance could be decreased while suppressing dopant diffusion. In addition, the inserted susceptor wafers above and below the processing wafer also suppressed the dopant diffusion and improved film roughness.
URI: http://dx.doi.org/10.1109/LED.2010.2090937
http://hdl.handle.net/11536/25821
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2090937
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 2
起始頁: 194
結束頁: 196
顯示於類別:期刊論文


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  1. 000286677700028.pdf