標題: Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETs
作者: Chen, William P. N.
Kuo, Jack J. Y.
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOSFET;strain silicon;surface-roughness-limited mobility;uniaxial
公開日期: 1-二月-2011
摘要: This letter provides an experimental assessment of surface-roughness-scattering-limited mobility (mu(SR)) under process-induced uniaxial strain and compares the strain sensitivity between mu(SR) and phonon-scattering-limited mobility (mu(PH)). By an accurate split C-V mobility extraction method, the mu(SR) of short-channel pMOSFETs was extracted at an ultralow temperature to suppress the phonon scattering mechanism. Our result indicates that mu(SR) has stronger stress sensitivity than mu(PH). Furthermore, the surface roughness mobility enhancement tends to increase as the vertical electric field increases. Our experimental findings confirm the previously reported results based on simulations.
URI: http://dx.doi.org/10.1109/LED.2010.2090126
http://hdl.handle.net/11536/25818
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2090126
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 2
起始頁: 113
結束頁: 115
顯示於類別:期刊論文


文件中的檔案:

  1. 000286677700001.pdf