標題: Structure and properties of GZO thin films grown on ZnO buffer layers
作者: Chu, C. Y.
Huang, C. H.
Kao, L. M.
Chou, C. P.
Hsu, C. Y.
Chen, C. W.
Chen, D. Y.
機械工程學系
Department of Mechanical Engineering
關鍵字: Transparent conductive oxide;Buffer layer;Growth rate;Grey relational analysis
公開日期: 1-二月-2011
摘要: Thin gallium-doped zinc oxide (in GZO the Ga(2)O(3) contents are approximately 3 wt%) films having different ZnO buffer layers were deposited using radio frequency (rf) magnetron sputtering. The use of a grey-based Taguchi method to determine the processing parameters of ZnO buffer layer deposition has been studied by considering multiple performance characteristics. A Taguchi method with an L(9) orthogonal array, signal-to-noise (S/N) ratio, and analysis of variance (ANOVA) is employed to investigate the performance characteristics in the deposition operations. The effect and optimization of ZnO buffer deposition parameters (rf power, sputtering pressure, thickness, and annealing) on the structure, morphology, electrical resistivity, and optical transmittance of the GZO films are studied. Annealing treatment and reduction in thickness resulted in a decrease in root-mean-square (RMS) surface roughness of the ZnO buffer layer. Using the optimal ZnO buffer layer obtained by the application of the grey-based Taguchi method, the electrical resistivity of GZO films was decreased from 2.94 x 10(-3) to 9.44 x 10(-4) Omega cm and the optical transmittance in the visible region was slightly increased from 84.81% to 85.82%. (C) 2010 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.spmi.2010.12.001
http://hdl.handle.net/11536/25788
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2010.12.001
期刊: SUPERLATTICES AND MICROSTRUCTURES
Volume: 49
Issue: 2
起始頁: 158
結束頁: 168
顯示於類別:期刊論文


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