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dc.contributor.authorLo, Ming-Huaen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:37:28Z-
dc.date.available2014-12-08T15:37:28Z-
dc.date.issued2011-02-01en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/10.1143/APEX.4.022102en_US
dc.identifier.urihttp://hdl.handle.net/11536/25778-
dc.description.abstractWe report the observation of an enhanced stimulated emission from optically pumped GaN nanopillars. The nanopillars were fabricated from an epitaxial wafer by patterned etching followed by crystalline regrowth. When the sample was optically excited, a strong stimulated emission peak emerged from a broad spontaneous emission background. The emission was attributed to electron-hole plasma gain at high carrier density. The emission slope efficiency was greatly enhanced by 20 times compared with a GaN substrate under the same pumping configuration. We remark that the enhancement is due to better gain and photon interaction from the multiple scattering of photons among nanopillars. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEnhanced Stimulated Emission from Optically Pumped Gallium Nitride Nanopillarsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/APEX.4.022102en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.citation.volume4en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000287378800015-
dc.citation.woscount2-
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