標題: Effects of oxygen addition on physical properties of ZnO thin film grown by radio frequency reactive magnetron sputtering
作者: Hsu, Che-Wei
Cheng, Tsung-Chieh
Yang, Chun-Hui
Shen, Yi-Ling
Wu, Jong-Shinn
Wu, Sheng-Yao
機械工程學系
Department of Mechanical Engineering
關鍵字: Zinc oxide;Radio frequency;Sputtering;Target poisoning;X-ray diffraction;X-ray photoelectron spectroscopy
公開日期: 3-二月-2011
摘要: We deposited a ZnO thin film on a microslide glass substrate at room temperature by employing the RF reactive magnetron sputtering process. Our results revealed that deposition rate decreases by increasing O(2)/(Ar + O(2)) ratio that was caused by two mechanisms. The first mechanism was the reduction of plasma density and, thus, argon ion density; caused by the addition of highly electronegative oxygen. While the second mechanism was target poisoning caused by the oxidation of the target. Additionally, at the O(2)/(Ar + O(2)) ratio of similar to 0.3 and the help of XPS analysis the optimum stoichiometry of ZnO thin film (the highest binding energy and content fraction of O(1) peak (O-Zn bond)) and the best polycrystallinity (the lowest FWHM with largest grain size) was found. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jallcom.2010.10.037
http://hdl.handle.net/11536/25774
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2010.10.037
期刊: JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 509
Issue: 5
起始頁: 1774
結束頁: 1776
顯示於類別:期刊論文


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