標題: DC to 6-Ghz high-gain low-noise GaInP/GaAs HBT direct-coupled amplifiers with and without emitter-capacitive peaking
作者: Meng, CC
Wu, TH
Lu, SS
電信工程研究所
Institute of Communications Engineering
關鍵字: GaInP;HBT;amplifier
公開日期: 5-十月-2004
摘要: High-gain shunt-series shunt-shunt wideband amplifiers with and without emitter-peaking capacitors are demonstrated by using GaInP/GaAs HBT technology. Experimental results show that the power gain is 28 dB front DC to 6 GHz for a wideband amplifier without emitter-peaking capacitors. On the other hand, a wideband amplifier with emitter-peaking capacitors can increase the gain bandwidth up to 8 GHz at the cost of lower input/output return loss. Both circuits have similar power and noise performance. The noise figures of both designs are less than 2.8 dB for frequencies below 6 GHz,. Op(1dB) and OIP3 are 7 and 20 dBin at 2 GHz, respectively. Total current consumption is 67 mA at 5-V supply voltage for both wideband amplifiers. (C) 2004 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.20377
http://hdl.handle.net/11536/25771
ISSN: 0895-2477
DOI: 10.1002/mop.20377
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 43
Issue: 1
起始頁: 67
結束頁: 69
顯示於類別:期刊論文


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  1. 000223543000022.pdf