標題: Microphotoluminescence spectra of hillocks in Al0.11Ga0.89N films
作者: Ke, WC
Ku, CS
Huang, HY
Chen, WC
Lee, L
Chen, WK
Chou, WC
Chen, WH
Lee, MC
Lin, WJ
Cheng, YC
Cherng, YI
電子物理學系
Department of Electrophysics
公開日期: 11-Oct-2004
摘要: The spatial variation of the optical properties of hillocks in Al0.11Ga0.89N films has been studied by using microphotoluminescence (mu-PL) microscopy. The mu-PL spectrum revealed a strong emission (I-H) at 351 nm from the hillock, besides the near-band-edge emission (I-nbe) at 341 nm. Moreover, the I-H intensity increases significantly and its full width at half maximum decreases from similar to76 to similar to53 meV by probing across the hillock center. These indicated that the hillock structure is a strong emission center. The temperature-dependent mu-PL, measurements showed that the I-H also has the S-shape behavior with a transition temperature of similar to120 K which is lower than that of I-nbe. The redshift of I-H is also smaller than I-nbe. Both indicated that the Al composition in hillocks is lower than the surrounding area. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1802379
http://hdl.handle.net/11536/25762
ISSN: 0003-6951
DOI: 10.1063/1.1802379
期刊: APPLIED PHYSICS LETTERS
Volume: 85
Issue: 15
起始頁: 3047
結束頁: 3049
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