標題: Investigation of GaN LED with Be-implanted Mg-doped GaN layer
作者: Huang, HW
Kao, CC
Chu, JT
Kuo, HC
Wang, SC
Yu, CC
Lin, CF
光電工程學系
Department of Photonics
關鍵字: Gallium nitride (GaN);light emitting diode (LED)
公開日期: 15-Oct-2004
摘要: We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10(18)CM(-3) and low specific contact resistance value of 2.0 x 10(-4) Omegacm(2) than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mseb.2004.05.024
http://hdl.handle.net/11536/25760
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2004.05.024
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 113
Issue: 1
起始頁: 19
結束頁: 23
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