Title: Comparison on mHEMT Q-Band Sub-Harmonic Mixers With/Without Delay Compensation
Authors: Syu, Jin-Siang
Meng, Chinchun
Su, Jen-Yi
Huang, Guo-Wei
Department of Electronics Engineering and Institute of Electronics
Keywords: Q band;metamorphic high electron mobility transistor (mHEMT);sub-harmonic mixer (SHM)
Issue Date: 2010
Abstract: Q-band sub-harmonic mixers (SHMs) with and without delay compensation are demonstrated in this paper using 0.15-mu m metamorphic high electron mobility transistor (mHEMT) technology. A conventional stacked-LO sub-harmonic mixing cell consists of two Gilbert cells in cascode with quadrature LO inputs. The proposed compensation core in parallel with the stacked-LO core improves the port-to-port isolation. A Marchand balun is employed at the RF port to generate wideband differential signals. As a result, SHMs w/ and w/o compensation achieve the conversion gain of 1/0.5 dB and noise figure of 23/20 dB when 2f(LO)=39/42 GHz. However, the compensation circuit improves the 2LO-to-RF isolation by 12 dB, 2LO-to-IF isolation by 5 dB and RF-to-IF isolation by 5 dB without additional power consumption.
URI: http://hdl.handle.net/11536/25754
ISBN: 978-2-87487-017-0
Begin Page: 194
End Page: 197
Appears in Collections:Conferences Paper