標題: Effects of compressive epitaxial strain on the magnetotransport properties of single-phase electron-doped La0.7Ce0.3MnO3 films
作者: Chang, WJ
Hsieh, CC
Juang, JY
Wu, KH
Uen, TM
Gou, YS
Hsu, CH
Lin, JY
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 15-十月-2004
摘要: Single-phase electron-doped manganite thin films with nominal composition of La0.7Ce0.3MnO3 (LCeMO) have been prepared on SrTiO3 (100) substrates by pulsed laser deposition. The conditions for obtaining purely single-phase LCeMO films lie within a very narrow window of substrate temperature (T(s)similar to720 degreesC) and laser energy density (E(D)similar to2 J/cm(2)) during deposition. In situ postdeposition annealing, mainly to relax the possible epitaxial in-plane tensile strain between the film and the substrate, leads to an increasing c-axis lattice constant accompanied by the formation of secondary CeO2 phase and higher metal-insulator transition temperature. This is indicative of a strong coupling between the electron and lattice degree of freedom. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1792808
http://hdl.handle.net/11536/25753
ISSN: 0021-8979
DOI: 10.1063/1.1792808
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 96
Issue: 8
起始頁: 4357
結束頁: 4361
顯示於類別:期刊論文


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