標題: Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching
作者: Huang, HW
Kao, CC
Hsueh, TH
Yu, CC
Lin, CF
Chu, JT
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
關鍵字: gallium nitride (GaN);nanorod;nickel;inductively coupled plasma (ICP)
公開日期: 25-Oct-2004
摘要: We report a novel method to fabricate GaN-based nanorod light emitting diodes (LEDs) with controllable dimension and density using self-assemble nickel (Ni) and Ni/Si3N4 nano-masks and inductively coupled plasma reactive ion etching (ICP-RIE). Under the fixed Cl-2/Ar flow rate of 50/20 sccm. ICP/Bias power of 400/100 W and chamber pressure of 0.67 Pa, the GaN-based nanorod LEDs were fabricated with density of 2.2 x 10(9) to 3 x 10(10) cm(-2) and dimension of 150-60 nm by self assemble Ni nano-masks with various size. The size of Ni/Si3N4 nano-mask was control by the thickness Ni film ranging 150-50 Angstrom and rapid thermal annealing condition. The technique offers a controllable method of fabrication of GaN-based nanorod LEDs and should be applicable for fabrication of the others III-V nanoscale photonic and electronic devices. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mseb.2004.07.004
http://hdl.handle.net/11536/25744
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2004.07.004
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 113
Issue: 2
起始頁: 125
結束頁: 129
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