標題: Analysis of instability line width and white wall created by the photolithography process
作者: Kuo, YK
Chao, CG
Lin, CY
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: line width;white wall
公開日期: 1-Nov-2004
摘要: In the photolithography processing of semiconductor, line width is smaller and smaller. Therefore, the requirements of process window are stricter than before. In the small line width, the formation of serious white wall will affect line width and cause rejects in following process. The study conducted research on the control of best focus in which particularly explored the relationship between exposure dose and line width and the phenomenon of white wall generated by focus. The research obtained related coefficients of exposure dose-line width and exposure dose-white wall by coating photo resist of different components with the same thickness on the surface of fused silica wafer. The results of research found that exposure dose might not only change line width but also had important effects on white wall. Among others, the most important factor for exposure dose is the component of sensitivity of photo resist. (C) 2004 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mejo.2004.06.023
http://hdl.handle.net/11536/25729
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2004.06.023
期刊: MICROELECTRONICS JOURNAL
Volume: 35
Issue: 11
起始頁: 915
結束頁: 922
Appears in Collections:Articles


Files in This Item:

  1. 000224370300008.pdf