標題: Highly oriented diamond growth on SixGe1-x (100) thin films
作者: Chang, TF
Chang, L
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: diamond;SixGe1-x;nucleation;transmission electron microscopy
公開日期: 1-十一月-2004
摘要: Highly oriented (100) diamond films have been successfully grown on SixGe1-x(100) thin films by bias enhanced nucleation (BEN) in microwave plasma chemical vapor deposition (MPCVD) system. Raman spectra show the 1332 cm(-1) peak which proves the formation of diamond. Diamond nucleation density on SixGe1-x substrate estimated by scanning electron microscopy is higher than 10(9) cm(-2). The interface between diamond and SixGe1-x substrate was characterized by transmission electron microscopy (TEM). About 20 nm decrease in thickness of the SixGe1-x film. was observed after bias enhanced nucleation step. TEM shows the existence of silicon carbide and heteroepitaxial diamond grains grown on SixGe1-x substrate. Characterization from high-resolution TEM on the specimen of short time deposition reveals that a number of epitaxial diamond grains were directly nucleated on SixGe1-x with {111} interplanar spacing ratio of diamond and SixGe1-x of 2:3. The diamond nucleation is found to be preferred on the ridge position of the rough substrate surface. Diamond {100} facets were quickly developed in the early stage of growth. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.diamond.2004.06.004
http://hdl.handle.net/11536/25716
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2004.06.004
期刊: DIAMOND AND RELATED MATERIALS
Volume: 13
Issue: 11-12
起始頁: 2088
結束頁: 2091
顯示於類別:會議論文


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