標題: Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 mu m
作者: Wang, JS
Hsiao, RS
Lin, G
Lin, KF
Liu, HY
Lai, CM
Wei, L
Liang, CY
Chi, JY
Kovsh, AR
Maleev, NA
Livshits, DA
Chen, JF
Yu, HC
Ustinov, VM
電子物理學系
Department of Electrophysics
公開日期: 1-Nov-2004
摘要: Molecular-beam-epitaxy growth of high structural and optical-quality InGaAsN/GaAs quantum wells (QW) has been investigated. The material quality can be improved significantly by using low-temperature growth to suppress the phase separation. High-performance ridge-waveguide InGaAsN/GaAs single QW lasers emitting at 1.3 mum have been demonstrated. Infinite-cavity-length threshold-current density of 400 A /cm(2), internal quantum efficiency of 96%. and a slope efficiency of 0.67 W/A for a cavity length L=1 mm were obtained. A TO46 packaging laser shows sin-le lateral-mode kink-free output power of more than 200 mW with a maximum total wallplug efficiency of 29% at room temperature under continuous wave (cw) operation. Moreover. 1.3 Am InGaAsN/GaAs QW vertical-cavity surface-emitting lasers with a threshold current density lower than 2 KA/cm(2) at room temperature have been achieved. We obtained multimode cw output power and slope efficiency in excess of 1 mW and 0.15 W/A. respectively. (C) 2004 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1807839
http://hdl.handle.net/11536/25703
ISSN: 1071-1023
DOI: 10.1116/1.1807839
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 22
Issue: 6
起始頁: 2663
結束頁: 2667
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