標題: ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATION
作者: WU, SL
LEE, CL
LEI, TF
CHEN, CF
CHEN, LJ
HO, KZ
LING, YC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-四月-1994
摘要: In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900-degrees-C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device.
URI: http://dx.doi.org/10.1109/55.285410
http://hdl.handle.net/11536/2570
ISSN: 0741-3106
DOI: 10.1109/55.285410
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 15
Issue: 4
起始頁: 120
結束頁: 122
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NK10700002.pdf