標題: Suppression of boron penetration in P+-poly-SiGe gate p-channel metal-oxide-semiconductor field-effect transistor using NH3-nitrided and N2O-grown gate oxides
作者: Yang, WL
Chao, TS
Lai, KH
電子物理學系
Department of Electrophysics
關鍵字: poly-SiGe;NH3;N2O;boron penetration;flat-band voltage shift
公開日期: 1-十一月-2004
摘要: High-performance p(+)-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide'instead of the conventional O-2-grown oxide. It is found that NH3-nitrided or N2O-grown oxide can suppress boron penetration in the p(+)-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.
URI: http://dx.doi.org/10.1143/JJAP.43.7462
http://hdl.handle.net/11536/25681
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.7462
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 11A
起始頁: 7462
結束頁: 7463
顯示於類別:期刊論文


文件中的檔案:

  1. 000225582000020.pdf