標題: Effects of O-2- and N-2-plasma treatments on copper surface
作者: Chiang, CC
Chen, MC
Li, LJ
Wu, ZC
Jang, SM
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: plasma treatment;copper surface;dielectric breakdown;Cu-O;Cu-N
公開日期: 1-Nov-2004
摘要: In this work, we investigate the effects of oxygen (O-2) and nitrogen (N-2) plasma treatments on the copper surface of aluminum/amorphous silicon-nitricarbide/copper (Al/alpha-SiCN/Cu) metal-insulator-metal (MIM) capacitors with respect to their leakage current and breakdown field. It is found that both the O-2- and N-2-plasma treatments have an adverse effect on the leakage current and breakdown field of MIM capacitors. The MIM capacitors with their Cu surfaces subjected to O-2- or N-2-plasma treatment exhibit a room-temperature leakage current density several orders of magnitude larger than that of the sample without plasma treatment at the same applied electric field. The room-temperature breakdown fields of the MIM capacitors with O-2- and N-2-plasma-treated Cu surfaces are 3.8 and 3.2 MV/cm, respectively, while that of the control sample without plasma treatment is 7.8MV/cm. The increased leakage currents and degraded breakdown fields of the O-2- and N-2-plasma-treated samples are attributed, respectively, to the presence of metastable Cu-O oxide and Cu-N azide at the Cu surfaces.
URI: http://dx.doi.org/10.1143/JJAP.43.7415
http://hdl.handle.net/11536/25680
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.7415
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 11A
起始頁: 7415
結束頁: 7418
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