標題: MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRY
作者: CHAO, TS
LEI, TF
CHANG, CY
LEE, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: OXIDE;ION IMPLANTATION;ELLIPSOMETRY;REFRACTIVE INDEX;LTCVD
公開日期: 1-四月-1994
摘要: In this study, the thickness of oxide film which is deposited by low-temperature chemical vapor deposition (LTCVD) on an implanted silicon substrate was measured by multiple-angle incident (MAI) ellipsometry. By using this method, the refractive index, thickness, and the effective index of the substrate can be calculated simultaneously. It is found that the thickness of oxide film on an implanted silicon substrate is only 4% different from that on a nonimplanted silicon substrate under the same deposition conditions. The result shows that a higher implantation energy results in a higher effective substrate index. Even with a high temperature and long annealing process, the refractive index of the implanted silicon substrate cannot recover to the value of nonimplanted silicon substrate.
URI: http://dx.doi.org/10.1143/JJAP.33.2031
http://hdl.handle.net/11536/2567
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.2031
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 4A
起始頁: 2031
結束頁: 2034
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NR95600061.pdf