標題: Post-Cu CMP cleaning for colloidal silica abrasive removal
作者: Chen, PL
Chen, JH
Tsai, MS
Dai, BT
Yeh, CF
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: copper;colloidal silica abrasive;post-chemical mechanical polishing cleaning;benzotriazole;Triton X-100
公開日期: 1-十一月-2004
摘要: In this study, an efficient approach for the removal of colloidal silica abrasives from the polished copper surface was proposed and demonstrated. This post-chemical mechanical polishing (CMP) cleaning process combines a buffing process with dilute HNO3/benzotriazole (BTA) aqueous solution for copper surface passivation and a polyvinyl alcohol (PVA) brush scrubbing process with wetting surfactants, Triton X-100, for colloidal silica removal. Buffing with HNO3/BTA aqueous solution was able to remove copper oxide and form the Cu(I)-BTA hydrophobic passivation. Scrubbing with Triton X-100 surfactant is to enhance the wettability on Cu(I)-BTA surface for the removal of residual silica abrasives. The wetting ability of Triton X-100 was determined by a contact angle and surface tension measurements. It was demonstrated that silica abrasives could be removed efficiently without copper corrosion by this cleaning process. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2004.06.006
http://hdl.handle.net/11536/25661
ISSN: 0167-9317
DOI: 10.1016/j.mee.2004.06.006
期刊: MICROELECTRONIC ENGINEERING
Volume: 75
Issue: 4
起始頁: 352
結束頁: 360
顯示於類別:期刊論文


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  1. 000225138100002.pdf