|標題:||Post-Cu CMP cleaning for colloidal silica abrasive removal|
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||copper;colloidal silica abrasive;post-chemical mechanical polishing cleaning;benzotriazole;Triton X-100|
|摘要:||In this study, an efficient approach for the removal of colloidal silica abrasives from the polished copper surface was proposed and demonstrated. This post-chemical mechanical polishing (CMP) cleaning process combines a buffing process with dilute HNO3/benzotriazole (BTA) aqueous solution for copper surface passivation and a polyvinyl alcohol (PVA) brush scrubbing process with wetting surfactants, Triton X-100, for colloidal silica removal. Buffing with HNO3/BTA aqueous solution was able to remove copper oxide and form the Cu(I)-BTA hydrophobic passivation. Scrubbing with Triton X-100 surfactant is to enhance the wettability on Cu(I)-BTA surface for the removal of residual silica abrasives. The wetting ability of Triton X-100 was determined by a contact angle and surface tension measurements. It was demonstrated that silica abrasives could be removed efficiently without copper corrosion by this cleaning process. (C) 2004 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Articles|
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