標題: PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES
作者: CHEN, HD
FENG, MS
CHEN, PA
LIN, KC
WU, JW
材料科學與工程學系
電控工程研究所
Department of Materials Science and Engineering
Institute of Electrical and Control Engineering
關鍵字: PHOTOLUMINESCENCE;HEAVILY CARBON-DOPED GAAS;HEAVILY ZINC-DOPED GAAS
公開日期: 1-四月-1994
摘要: Photoluminescent (PL) properties of heavily carbon- and zinc-doped GaAs were investigated for concentration from 8 X 10(17) to 2.3 x 10(20) cm-3 and temperature from 300 K to 20 K. Both a band-to-band (B, B) peak and a band-to-acceptor (e, A) peak appeared at 300 K for the heavily p-type-doped GaAs PL spectra, even in degenerated GaAs. The variation of the intensities of the (e, A) peak and (B, B) peak with concentration and temperature was investigated, and the change in position of the two peaks at various concentrations and temperatures was observed. The rapid increase in linewidth with increasing concentration due to the appearance of a shoulder peak was also studied; this behavior is different from that of the shoulder peak in the PL spectrum from Zn-doped crystal.
URI: http://dx.doi.org/10.1143/JJAP.33.1920
http://hdl.handle.net/11536/2566
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.1920
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 4A
起始頁: 1920
結束頁: 1927
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NR95600041.pdf