標題: Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric
作者: Wu, N
Zhang, QC
Zhu, CX
Chan, DSH
Li, MF
Balasubramanian, N
Chin, A
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-2004
摘要: An alternative surface passivation process for high-k Ge metal-oxide-semiconductor (MOS) device has been studied. The surface SiH4 annealing was implemented prior to HfO2 deposition. X-ray photoelectron spectroscopy analysis results show that the SiH4 surface passivation can greatly prevent the formation of unstable germanium oxide at the surface and suppress the Ge out-diffusion after the HfO2 deposition. The electrical measurement shows that an equivalent oxide thickness of 13.5 Angstrom and a leakage current of 1.16x10(-5) A/cm(2) at 1 V gate bias was achieved for TaN/HfO2/Ge MOS capacitors with the SiH4 surface treatment. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1812835
http://hdl.handle.net/11536/25656
ISSN: 0003-6951
DOI: 10.1063/1.1812835
期刊: APPLIED PHYSICS LETTERS
Volume: 85
Issue: 18
起始頁: 4127
結束頁: 4129
顯示於類別:期刊論文


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