標題: Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n(+) type doped GaAs
作者: Chen, YS
Wu, KS
Wang, DP
Huang, KF
Huang, TC
電子物理學系
Department of Electrophysics
公開日期: 1-十一月-2004
摘要: Electroreflectance of surface-intrinsic-n(+) type doped GaAs has been measured over a various biased voltage. The spectra have exhibited many Franz-Keldysh oscillations (FKOs) above band gap energy E-g. The electric field F and critical point energy E-c can be determined from the slope and intercept of FKOs fitting. Hence, we can obtain E-c as a function of F. In most of previous works, E-c is taken as E-g. However, it was found that E-c increases with F in this work. In order to explain this, the gain of energy of electron and hole in F was discussed. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1814794
http://hdl.handle.net/11536/25655
ISSN: 0003-6951
DOI: 10.1063/1.1814794
期刊: APPLIED PHYSICS LETTERS
Volume: 85
Issue: 18
起始頁: 4064
結束頁: 4066
顯示於類別:期刊論文


文件中的檔案:

  1. 000224894900036.pdf