標題: Evidence for capture of holes into resonant states in boron-doped silicon
作者: Yen, ST
Tulupenko, VN
Cheng, ES
Chung, PK
Lee, CP
Dalakyan, AT
Chao, KA
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-2004
摘要: The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of the resonant states. (C) 2004 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1795985
http://hdl.handle.net/11536/25653
ISSN: 0021-8979
DOI: 10.1063/1.1795985
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 96
Issue: 9
起始頁: 4970
結束頁: 4975
顯示於類別:期刊論文


文件中的檔案:

  1. 000224799300038.pdf